Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1868077
Title: Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memories
Authors: Chen, J.H. 
Yoo, W.J. 
Chan, D.S.H. 
Tang, L.-J.
Issue Date: 14-Feb-2005
Source: Chen, J.H., Yoo, W.J., Chan, D.S.H., Tang, L.-J. (2005-02-14). Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memories. Applied Physics Letters 86 (7) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1868077
Abstract: A self-assembly of high-density Al2O3 nanodots (NDs) on SiO2 has been demonstrated by employing a two-step controlled annealing method. Results show that the conglomeration of Al is impeded by oxygen and the size and density of Al2O3 NDs can be controlled by the initial Al film thickness and annealing temperature. Memory devices with Al2O3 NDs fabricated using this technique show improved retention properties compared to those with Al2O3 continuous films. A comparison of temperature dependency shows that the good retention property originates from the suppression of lateral migration of electrons via Frenkel-Poole tunneling. © 2005 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57360
ISSN: 00036951
DOI: 10.1063/1.1868077
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