Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.2083930
Title: Self-assembled tungsten nanocrystals in high- k dielectric for nonvolatile memory application
Authors: Samanta, S.K. 
Tan, Z.Y.L.
Yoo, W.J. 
Samudra, G. 
Lee, S. 
Bera, L.K.
Balasubramanian, N.
Issue Date: Nov-2005
Source: Samanta, S.K., Tan, Z.Y.L., Yoo, W.J., Samudra, G., Lee, S., Bera, L.K., Balasubramanian, N. (2005-11). Self-assembled tungsten nanocrystals in high- k dielectric for nonvolatile memory application. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 23 (6) : 2278-2283. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2083930
Abstract: Discrete midgap tungsten nanocrystals (W-NCs) embedded in atomic layer deposited hafnium aluminate (HfAlO) film were fabricated by a self-assembly method using sputtering followed by rapid thermal annealing and integrated into transistors for nonvolatile memory application. Transmission electron microscopy and single electron diffraction analysis revealed the formation of crystalline W-NCs (∼5 nm) embedded in an amorphous HfAlO matrix. Effects of deposition of thin Al2 O3 on the formation of W-NCs were investigated. Al2 O3 was found to be effective to retain the amorphous property of the underlying HfAlO, assisting to form uniformly distributed and small W-NCs. Electrical characterization of the SiHfAlOW-NCsHfAlO structure based memory device showed that clear memory effects (1.8 V memory window at operating bias of 7 V) and good retention properties (50 mVdec threshold voltage decay rate) originate from the charge storage of electrons in W-NDs and deep quantum well of W-NDs embedded in the HfAlO+ Al2 O3 high- k structure. © 2005 American Vacuum Society.
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/57359
ISSN: 10711023
DOI: 10.1116/1.2083930
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