Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2009.2028660
Title: Selenium segregation for lowering the contact resistance in ultrathin-body MOSFETs with fully metallized source/drain
Authors: Wong, H.-S.
Chan, L.
Samudra, G. 
Yeo, Y.-C. 
Keywords: Schottky barrier
Selenium segregation
Silicide contact resistance
Ultrathin body (UTB)
Issue Date: Oct-2009
Source: Wong, H.-S., Chan, L., Samudra, G., Yeo, Y.-C. (2009-10). Selenium segregation for lowering the contact resistance in ultrathin-body MOSFETs with fully metallized source/drain. IEEE Electron Device Letters 30 (10) : 1087-1089. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2028660
Abstract: We report the first integration of selenium (Se) segregation contact technology in ultrathin-body (UTB) n-MOSFET featuring Ni fully silicided source and drain. During the Ni silicidation process, the implanted Se segregated at the NiSi-n-Si interface, leading to significant reduction of Schottky barrier height and contact resistance. The UTB n-MOSFETs integrated with Se segregation (SeS) contact technology show significant external series resistance reduction and drive current performance enhancement. Drain-induced barrier lowering and gate leakage current density are not adversely affected by the SeS process. © 2009 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57355
ISSN: 07413106
DOI: 10.1109/LED.2009.2028660
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