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|Title:||Selenium segregation for lowering the contact resistance in ultrathin-body MOSFETs with fully metallized source/drain|
Silicide contact resistance
Ultrathin body (UTB)
|Citation:||Wong, H.-S., Chan, L., Samudra, G., Yeo, Y.-C. (2009-10). Selenium segregation for lowering the contact resistance in ultrathin-body MOSFETs with fully metallized source/drain. IEEE Electron Device Letters 30 (10) : 1087-1089. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2028660|
|Abstract:||We report the first integration of selenium (Se) segregation contact technology in ultrathin-body (UTB) n-MOSFET featuring Ni fully silicided source and drain. During the Ni silicidation process, the implanted Se segregated at the NiSi-n-Si interface, leading to significant reduction of Schottky barrier height and contact resistance. The UTB n-MOSFETs integrated with Se segregation (SeS) contact technology show significant external series resistance reduction and drive current performance enhancement. Drain-induced barrier lowering and gate leakage current density are not adversely affected by the SeS process. © 2009 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
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