Please use this identifier to cite or link to this item:
|Title:||Selenium segregation for lowering the contact resistance in ultrathin-body MOSFETs with fully metallized source/drain|
Silicide contact resistance
Ultrathin body (UTB)
|Citation:||Wong, H.-S., Chan, L., Samudra, G., Yeo, Y.-C. (2009-10). Selenium segregation for lowering the contact resistance in ultrathin-body MOSFETs with fully metallized source/drain. IEEE Electron Device Letters 30 (10) : 1087-1089. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2028660|
|Abstract:||We report the first integration of selenium (Se) segregation contact technology in ultrathin-body (UTB) n-MOSFET featuring Ni fully silicided source and drain. During the Ni silicidation process, the implanted Se segregated at the NiSi-n-Si interface, leading to significant reduction of Schottky barrier height and contact resistance. The UTB n-MOSFETs integrated with Se segregation (SeS) contact technology show significant external series resistance reduction and drive current performance enhancement. Drain-induced barrier lowering and gate leakage current density are not adversely affected by the SeS process. © 2009 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 19, 2019
WEB OF SCIENCETM
checked on Feb 11, 2019
checked on Dec 22, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.