Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jallcom.2006.02.086
Title: Selective growth of gallium nitride nanowires by femtosecond laser patterning
Authors: Ng, D.K.T.
Hong, M.H. 
Tan, L.S. 
Zhou, Y.
Chen, G.X. 
Keywords: Femtosecond laser
Nanopatterning
Nanowire
Issue Date: 31-Jan-2008
Source: Ng, D.K.T., Hong, M.H., Tan, L.S., Zhou, Y., Chen, G.X. (2008-01-31). Selective growth of gallium nitride nanowires by femtosecond laser patterning. Journal of Alloys and Compounds 449 (1-2) : 250-252. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jallcom.2006.02.086
Abstract: We report on gallium nitride (GaN) nanowires grown using pulsed laser ablation, adopting the vapor-liquid-solid (VLS) growth mechanism. The GaN nanowires are obtained based on the principle that a catalyst is required to initiate the nanowires growth. Locations of the GaN nanowires are patterned using femtosecond laser and focused ion beam. Scanning electron microscopy (SEM) is used to characterize the nanowires. This patterning of GaN nanowires will enable selective growth of nanowires and bottom-up assembly of integrated electronic and photonic devices. © 2006 Elsevier B.V. All rights reserved.
Source Title: Journal of Alloys and Compounds
URI: http://scholarbank.nus.edu.sg/handle/10635/57354
ISSN: 09258388
DOI: 10.1016/j.jallcom.2006.02.086
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