Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.3556954
Title: Seal and encapsulate cavities for complementary metal-oxide-semiconductor microelectromechanical system thermoelectric power generators
Authors: Xie, J.
Lee, C. 
Wang, M.-F.
Feng, H.
Issue Date: Mar-2011
Source: Xie, J., Lee, C., Wang, M.-F., Feng, H. (2011-03). Seal and encapsulate cavities for complementary metal-oxide-semiconductor microelectromechanical system thermoelectric power generators. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 29 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1116/1.3556954
Abstract: This article presents a method for fabricating thermoelectric power generators (TPGs) using wafer-level vacuum sealing and encapsulation at low temperature with complementary metal-oxide-semiconductor compatible processes and materials. A novel TPG design with thermal legs embedded in top and bottom vacuum cavities is proposed. Simulation results validate that the two cavities can maximize the temperature difference between the hot and cold junctions of thermocouples. Process flows for wafer-level sealing and encapsulating cavities are presented and a thermoelectric power generator is developed based on heavily p - and n -doped polysilicon. A power generation factor of 0.052 μW cm-2 K-2 was achieved using this TPG. © 2011 American Vacuum Society.
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/57342
ISSN: 10711023
DOI: 10.1116/1.3556954
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