Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/57323
Title: Rutherford backscattering analysis of GaN decomposition
Authors: Choi, H.W.
Cheong, M.G.
Rana, M.A.
Chua, S.J. 
Osipowicz, T. 
Pan, J.S.
Issue Date: May-2003
Source: Choi, H.W.,Cheong, M.G.,Rana, M.A.,Chua, S.J.,Osipowicz, T.,Pan, J.S. (2003-05). Rutherford backscattering analysis of GaN decomposition. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 (3) : 1080-1083. ScholarBank@NUS Repository.
Abstract: Rutherford backscattering analysis of GaN decomposition was presented. X-ray photoelectron spectroscopy and atomic force microscopy were also used for the analysis. The development of a surface defect peak at elevated temperatures was found out. Atomic force microscopy revealed severe roughening of the surface.
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/57323
ISSN: 10711023
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

41
checked on Dec 8, 2017

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.