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|Title:||Rutherford backscattering analysis of GaN decomposition|
|Source:||Choi, H.W.,Cheong, M.G.,Rana, M.A.,Chua, S.J.,Osipowicz, T.,Pan, J.S. (2003-05). Rutherford backscattering analysis of GaN decomposition. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 (3) : 1080-1083. ScholarBank@NUS Repository.|
|Abstract:||Rutherford backscattering analysis of GaN decomposition was presented. X-ray photoelectron spectroscopy and atomic force microscopy were also used for the analysis. The development of a surface defect peak at elevated temperatures was found out. Atomic force microscopy revealed severe roughening of the surface.|
|Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Appears in Collections:||Staff Publications|
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