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|Title:||Resonator-based silicon electro-optic modulator with low power consumption|
|Citation:||Xin, M., Danner, A.J., Png, C.E., Lim, S.T. (2009-04). Resonator-based silicon electro-optic modulator with low power consumption. Japanese Journal of Applied Physics 48 (4 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.48.04C104|
|Abstract:||This paper demonstrates, via simulation, an electro-optic modulator based on a subwavelength Fabry-Perot resonator cavity with low power consumption of 86 μW/μm. This is, to the best of our knowledge, the lowest power reported for silicon photonic bandgap modulators. The device is modulated at a doped p-i-n junction overlapping the cavity in a silicon waveguide perforated with etched holes, with the doping area optimized for minimum power consumption. The surface area of the entire device is only 2.1 μm2, which compares favorably to other silicon-based modulators. A modulation speed of at least 300MHz is detected from the electrical simulator after sidewall doping is introduced which is suitable for sensing or fiber to the home (FTTH) technologies, where speed can be traded for low cost and power consumption. The device does not rely on ultra-high Q, and could serve as a sensor, modulator, or passive filter with built-in calibration. © 2009 The Japan Society of Applied Physics.|
|Source Title:||Japanese Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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