Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/57246
Title: Reliability of thin gate oxides irradiated under X-ray lithography conditions
Authors: Cho, B.J. 
Kim, S.J. 
Ang, C.H.
Ling, C.H. 
Joo, M.S.
Yeo, I.S.
Keywords: Quasi-breakdown
Radiation-induced leakage current (RILC)
Stress-induced leakage current (SILC)
Ultra-thin gate oxide
X-ray lithography
Issue Date: Apr-2001
Source: Cho, B.J.,Kim, S.J.,Ang, C.H.,Ling, C.H.,Joo, M.S.,Yeo, I.S. (2001-04). Reliability of thin gate oxides irradiated under X-ray lithography conditions. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 (4 B) : 2819-2822. ScholarBank@NUS Repository.
Abstract: The effect of X-ray lithography (XRL) process on the reliability of thin gate oxide has been investigated. A large increase in the low-field excess leakage current was observed on irradiated oxides, which was very similar to the electrical stress-induced leakage currents. However, it has been found that the long-term reliability of ultra-thin gate oxide is not affected by XRL process. The excess leakage current could be eliminated by thermal annealing at 400°C and above and no residual damages in the oxide were observed after the annealing.
Source Title: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URI: http://scholarbank.nus.edu.sg/handle/10635/57246
ISSN: 00214922
Appears in Collections:Staff Publications

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