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|Title:||Reduced carrier backscattering in heterojunction SiGe nanowire channels|
|Citation:||Jiang, Y., Singh, N., Liow, T.Y., Lo, G.Q., Chan, D.S.H., Kwong, D.L. (2008). Reduced carrier backscattering in heterojunction SiGe nanowire channels. Applied Physics Letters 93 (25) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3050527|
|Abstract:||In this work, we investigate the effect of energy band profile modulation on carrier backscattering in SiGe nanowire (SGNW) heterojunction p -channel field effect transistors. The energy band profile is modulated by increasing the Ge mole fraction in nanowire channels as compared to source/drain regions using the pattern-dependent Ge condensation technique. The carrier backscattering characteristics of the fabricated heterojunction p -type SGNW transistors, extracted using a temperature-dependent analytical model, exhibited a decrease of 19% in hole backscattering coefficient in comparison to the reference planar devices with uniform Ge concentration. The reduction in backscattering coefficient is attributed to KT/q barrier layer thinning of the source-to-channel barrier for the holes as a result of the modulation in energy band profile caused by variation in Ge concentration. © 2008 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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