Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3050527
Title: Reduced carrier backscattering in heterojunction SiGe nanowire channels
Authors: Jiang, Y.
Singh, N.
Liow, T.Y.
Lo, G.Q.
Chan, D.S.H. 
Kwong, D.L.
Issue Date: 2008
Source: Jiang, Y., Singh, N., Liow, T.Y., Lo, G.Q., Chan, D.S.H., Kwong, D.L. (2008). Reduced carrier backscattering in heterojunction SiGe nanowire channels. Applied Physics Letters 93 (25) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3050527
Abstract: In this work, we investigate the effect of energy band profile modulation on carrier backscattering in SiGe nanowire (SGNW) heterojunction p -channel field effect transistors. The energy band profile is modulated by increasing the Ge mole fraction in nanowire channels as compared to source/drain regions using the pattern-dependent Ge condensation technique. The carrier backscattering characteristics of the fabricated heterojunction p -type SGNW transistors, extracted using a temperature-dependent analytical model, exhibited a decrease of 19% in hole backscattering coefficient in comparison to the reference planar devices with uniform Ge concentration. The reduction in backscattering coefficient is attributed to KT/q barrier layer thinning of the source-to-channel barrier for the holes as a result of the modulation in energy band profile caused by variation in Ge concentration. © 2008 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57219
ISSN: 00036951
DOI: 10.1063/1.3050527
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