Please use this identifier to cite or link to this item:
|Title:||Realistic simulations on reverse junction characteristics of sic and GaN power semiconductor devices|
|Keywords:||High voltage p-n junction|
SiC/GaN diode simulation
WBG power semiconductor
|Citation:||Wei, G., Liang, Y.C., Samudra, G.S. (2012-01). Realistic simulations on reverse junction characteristics of sic and GaN power semiconductor devices. Journal of Power Electronics 12 (1) : 19-23. ScholarBank@NUS Repository. https://doi.org/10.6113/JPE.2012.12.1.19|
|Abstract:||This paper presents a practical methodology for realistic simulation on reverse characteristics of Wide Bandgap (WBG) SiC and GaN p-n junctions. The adjustment on certain physic-based model parameters, such as the trap density and photo-generation for SiC junction, and impact ionization coefficients and critical field for GaN junction are described. The adjusted parameters were used in Synopsys Medici simulation to obtain a realistic p-n junction avalanche breakdown voltage. The simulation results were verified through benchmarking against independent data reported by others.|
|Source Title:||Journal of Power Electronics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 29, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.