Please use this identifier to cite or link to this item: https://doi.org/10.6113/JPE.2012.12.1.19
Title: Realistic simulations on reverse junction characteristics of sic and GaN power semiconductor devices
Authors: Wei, G.
Liang, Y.C. 
Samudra, G.S. 
Keywords: High voltage p-n junction
SiC/GaN diode simulation
WBG power semiconductor
Issue Date: Jan-2012
Citation: Wei, G., Liang, Y.C., Samudra, G.S. (2012-01). Realistic simulations on reverse junction characteristics of sic and GaN power semiconductor devices. Journal of Power Electronics 12 (1) : 19-23. ScholarBank@NUS Repository. https://doi.org/10.6113/JPE.2012.12.1.19
Abstract: This paper presents a practical methodology for realistic simulation on reverse characteristics of Wide Bandgap (WBG) SiC and GaN p-n junctions. The adjustment on certain physic-based model parameters, such as the trap density and photo-generation for SiC junction, and impact ionization coefficients and critical field for GaN junction are described. The adjusted parameters were used in Synopsys Medici simulation to obtain a realistic p-n junction avalanche breakdown voltage. The simulation results were verified through benchmarking against independent data reported by others.
Source Title: Journal of Power Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/57198
ISSN: 15982092
DOI: 10.6113/JPE.2012.12.1.19
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