Please use this identifier to cite or link to this item:
|Title:||Probing the ErSi1.7 Phase formation by micro-Raman spectroscopy|
|Authors:||Lee, R.T.-P. |
|Citation:||Lee, R.T.-P., Tan, K.-M., Liow, T.-Y., Ho, C.-S., Tripathy, S., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C. (2007). Probing the ErSi1.7 Phase formation by micro-Raman spectroscopy. Journal of the Electrochemical Society 154 (5) : H361-H364. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2710201|
|Abstract:||Micro-Raman spectroscopy has been applied to study the solid-state reaction of Er on Si(001) substrates. The Raman peaks observed at 204, 236, and 416 cm-1 were clearly established to be associated with the ErSi1.7 phase. The Raman data correlates well with results from Rutherford backscattering and X-ray diffraction. The results were further utilized to show that Raman spectroscopy can be used to assess the quality of ErSi1.7 formed, analogous to off-line electrical characterization techniques, for process monitoring. We demonstrate the potential of Raman spectroscopy as a process-monitoring tool to probe the formation of ErSi1.7 in microelectronic devices so as to aid process development and integration. © 2007 The Electrochemical Society.|
|Source Title:||Journal of the Electrochemical Society|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 19, 2018
checked on Jul 6, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.