Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.2998702
Title: Preferential orientation effects in partial melt laser crystallization of silicon
Authors: Witte, D.J.
Masbou, M.P.A.
Crnogorac, F.
Pease, R.F.W.
Pickard, D.S. 
Issue Date: 2008
Source: Witte, D.J., Masbou, M.P.A., Crnogorac, F., Pease, R.F.W., Pickard, D.S. (2008). Preferential orientation effects in partial melt laser crystallization of silicon. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 26 (6) : 2455-2459. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2998702
Abstract: The ability to produce a known crystalline orientation in semiconductor materials is essential for many applications, including monolithic three-dimensional integration of devices. In particular, crystallization must be done without exceeding the thermal budget of surrounding or underlying devices. Using a 532 nm laser pulse of 2 ms duration on a 185 nm thick amorphous silicon film, the authors demonstrate that partial melting of silicon can yield crystallites several microns in size with a strong 〈001〉 preferential orientation. They investigate the effects of laser pulse duration, film thickness, and heat flow rate on the degree of texturing. By using a thinner silicon film and reducing the laser pulse duration further, such a process could be compatible with the thermal constraints of three-dimensional integration. © 2008 American Vacuum Society.
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/57115
ISSN: 10711023
DOI: 10.1116/1.2998702
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