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https://doi.org/10.1109/LED.2008.2011503
DC Field | Value | |
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dc.title | Polycrystalline Si nanowire SONOS nonvolatile memory cell fabricated on a gate-all-around (GAA) channel architecture | |
dc.contributor.author | Fu, J. | |
dc.contributor.author | Jiang, Y. | |
dc.contributor.author | Singh, N. | |
dc.contributor.author | Zhu, C.X. | |
dc.contributor.author | Lo, G.Q. | |
dc.contributor.author | Kwong, D.L. | |
dc.date.accessioned | 2014-06-17T03:02:06Z | |
dc.date.available | 2014-06-17T03:02:06Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | Fu, J., Jiang, Y., Singh, N., Zhu, C.X., Lo, G.Q., Kwong, D.L. (2009). Polycrystalline Si nanowire SONOS nonvolatile memory cell fabricated on a gate-all-around (GAA) channel architecture. IEEE Electron Device Letters 30 (3) : 246-249. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2011503 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/57087 | |
dc.description.abstract | In this letter, we present SONOS nonvolatile memory device with gate-all-around polycrystalline silicon (poly-Si) nanowire channel. The SONOS memory cell with 23-nm nanowire width, fabricated using top-down CMOS process, exhibits fast programming and erasing speed as well as improved subthreshold behavior of the transistor. Both the memory and transistor characteristics are dependent on the nanowire width-smaller the width, better the performance. The good device characteristics along with simple fabrication method make the poly-Si nanowire SONOS memory a promising candidate for future system-on-panel and system-on-chip applications. © 2009 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2008.2011503 | |
dc.source | Scopus | |
dc.subject | Gate-all-around (GAA) | |
dc.subject | Nanowire | |
dc.subject | Nonvolatile memory | |
dc.subject | Polycrystalline silicon (poly-Si) | |
dc.subject | SONOS | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/LED.2008.2011503 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 30 | |
dc.description.issue | 3 | |
dc.description.page | 246-249 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | 000263920400015 | |
Appears in Collections: | Staff Publications |
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