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|Title:||Polycrystalline Si nanowire SONOS nonvolatile memory cell fabricated on a gate-all-around (GAA) channel architecture|
Polycrystalline silicon (poly-Si)
|Citation:||Fu, J., Jiang, Y., Singh, N., Zhu, C.X., Lo, G.Q., Kwong, D.L. (2009). Polycrystalline Si nanowire SONOS nonvolatile memory cell fabricated on a gate-all-around (GAA) channel architecture. IEEE Electron Device Letters 30 (3) : 246-249. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2011503|
|Abstract:||In this letter, we present SONOS nonvolatile memory device with gate-all-around polycrystalline silicon (poly-Si) nanowire channel. The SONOS memory cell with 23-nm nanowire width, fabricated using top-down CMOS process, exhibits fast programming and erasing speed as well as improved subthreshold behavior of the transistor. Both the memory and transistor characteristics are dependent on the nanowire width-smaller the width, better the performance. The good device characteristics along with simple fabrication method make the poly-Si nanowire SONOS memory a promising candidate for future system-on-panel and system-on-chip applications. © 2009 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
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