Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2006979
Title: Physical mechanism of oxide interfacial traps, carrier mobility degradation and series resistance on contrast reversal in scanning-capacitance-microscopy dopant concentration extraction
Authors: Wong, K.M. 
Chim, W.K. 
Yan, J.
Issue Date: 2005
Source: Wong, K.M., Chim, W.K., Yan, J. (2005). Physical mechanism of oxide interfacial traps, carrier mobility degradation and series resistance on contrast reversal in scanning-capacitance-microscopy dopant concentration extraction. Applied Physics Letters 87 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2006979
Abstract: In this letter, the contrast reversal effect in scanning-capacitance- microscopy (SCM) dopant concentration extraction is investigated both theoretically and experimentally. The shift of the turning point in the nonmonotonic response of peak dC/dV signal versus dopant concentration to higher dopant concentrations is explained by the difference of the capture/emission time constant of the interface states and the series resistance of the semiconductor sample. This is verified by comparing the experimental SCM measurements with the simulated peak dC/dV profile on a p-type multiple dopant step sample. The contrast reversal effect, which affects the accuracy of dopant concentration extraction using the SCM peak dC/dV signal, can be minimized by using an overlying oxide with good interfacial quality and a semiconductor sample of low series resistance. © 2005 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57058
ISSN: 00036951
DOI: 10.1063/1.2006979
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