Please use this identifier to cite or link to this item:
|Title:||Physical mechanism of oxide interfacial traps, carrier mobility degradation and series resistance on contrast reversal in scanning-capacitance-microscopy dopant concentration extraction|
|Authors:||Wong, K.M. |
|Citation:||Wong, K.M., Chim, W.K., Yan, J. (2005). Physical mechanism of oxide interfacial traps, carrier mobility degradation and series resistance on contrast reversal in scanning-capacitance-microscopy dopant concentration extraction. Applied Physics Letters 87 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2006979|
|Abstract:||In this letter, the contrast reversal effect in scanning-capacitance- microscopy (SCM) dopant concentration extraction is investigated both theoretically and experimentally. The shift of the turning point in the nonmonotonic response of peak dC/dV signal versus dopant concentration to higher dopant concentrations is explained by the difference of the capture/emission time constant of the interface states and the series resistance of the semiconductor sample. This is verified by comparing the experimental SCM measurements with the simulated peak dC/dV profile on a p-type multiple dopant step sample. The contrast reversal effect, which affects the accuracy of dopant concentration extraction using the SCM peak dC/dV signal, can be minimized by using an overlying oxide with good interfacial quality and a semiconductor sample of low series resistance. © 2005 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 17, 2018
WEB OF SCIENCETM
checked on Jun 27, 2018
checked on Jun 30, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.