Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.1947901
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dc.title | Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors | |
dc.contributor.author | Ren, C. | |
dc.contributor.author | Chan, D.S.H. | |
dc.contributor.author | Wang, X.P. | |
dc.contributor.author | Faizhal, B.B. | |
dc.contributor.author | Li, M.-F. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.contributor.author | Trigg, A.D. | |
dc.contributor.author | Agarwal, A. | |
dc.contributor.author | Balasubramanian, N. | |
dc.contributor.author | Pan, J.S. | |
dc.contributor.author | Lim, P.C. | |
dc.contributor.author | Huan, A.C.H. | |
dc.contributor.author | Kwong, D.-L. | |
dc.date.accessioned | 2014-06-17T03:01:45Z | |
dc.date.available | 2014-06-17T03:01:45Z | |
dc.date.issued | 2005-08-15 | |
dc.identifier.citation | Ren, C., Chan, D.S.H., Wang, X.P., Faizhal, B.B., Li, M.-F., Yeo, Y.-C., Trigg, A.D., Agarwal, A., Balasubramanian, N., Pan, J.S., Lim, P.C., Huan, A.C.H., Kwong, D.-L. (2005-08-15). Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters 87 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1947901 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/57056 | |
dc.description.abstract | Lanthanide-incorporated tantalum nitride (TaN) is studied as a potential metal gate candidate for n -channel metal-oxide-semiconductor field-effect transistors (n -MOSFETs). Lanthanides such as terbium (Tb), erbium (Er), and ytterbium (Yb) are introduced into TaN to form Ta1-x Tbx Ny, Ta1-x Erx Ny, and Ta1-x Ybx Ny metal gates, respectively, on Si O2 dielectric. The resistivity, crystallinity, film composition, and work function of Ta1-x Tbx Ny, Ta1-x Erx Ny, and Ta1-x Ybx Ny films were investigated at different post-metal-anneal temperatures and for different lanthanide concentrations. It was found that the work function of lanthanide-incorporated TaN can be effectively tuned by increasing the concentration of lanthanide. Work functions of about 4.2-4.3 eV can be achieved even after a 1000 °C rapid thermal anneal, making lanthanide-incorporated TaN a promising metal gate candidate for n -MOSFETs. The enhanced nitrogen concentration and the possible presence of lanthanide-N or Ta-N-lanthanide compounds in lanthanide-incorporated TaN film could be responsible for its chemical-thermal stability on Si O2. © 2005 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1947901 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1063/1.1947901 | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 87 | |
dc.description.issue | 7 | |
dc.description.page | - | |
dc.description.coden | APPLA | |
dc.identifier.isiut | 000231246000068 | |
Appears in Collections: | Staff Publications |
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