Please use this identifier to cite or link to this item:
|Title:||Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors|
|Source:||Ren, C., Chan, D.S.H., Wang, X.P., Faizhal, B.B., Li, M.-F., Yeo, Y.-C., Trigg, A.D., Agarwal, A., Balasubramanian, N., Pan, J.S., Lim, P.C., Huan, A.C.H., Kwong, D.-L. (2005-08-15). Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters 87 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1947901|
|Abstract:||Lanthanide-incorporated tantalum nitride (TaN) is studied as a potential metal gate candidate for n -channel metal-oxide-semiconductor field-effect transistors (n -MOSFETs). Lanthanides such as terbium (Tb), erbium (Er), and ytterbium (Yb) are introduced into TaN to form Ta1-x Tbx Ny, Ta1-x Erx Ny, and Ta1-x Ybx Ny metal gates, respectively, on Si O2 dielectric. The resistivity, crystallinity, film composition, and work function of Ta1-x Tbx Ny, Ta1-x Erx Ny, and Ta1-x Ybx Ny films were investigated at different post-metal-anneal temperatures and for different lanthanide concentrations. It was found that the work function of lanthanide-incorporated TaN can be effectively tuned by increasing the concentration of lanthanide. Work functions of about 4.2-4.3 eV can be achieved even after a 1000 °C rapid thermal anneal, making lanthanide-incorporated TaN a promising metal gate candidate for n -MOSFETs. The enhanced nitrogen concentration and the possible presence of lanthanide-N or Ta-N-lanthanide compounds in lanthanide-incorporated TaN film could be responsible for its chemical-thermal stability on Si O2. © 2005 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 7, 2017
WEB OF SCIENCETM
checked on Nov 29, 2017
checked on Dec 18, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.