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Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.commatsci.2010.01.052
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dc.titlePhotonic band structure of nanoporous anodized aluminum oxide with radius-to-period ratio modulation
dc.contributor.authorZhang, L.
dc.contributor.authorXin, M.
dc.contributor.authorTeng, J.
dc.contributor.authorChua, S.
dc.date.accessioned2014-06-17T03:01:43Z
dc.date.available2014-06-17T03:01:43Z
dc.date.issued2010
dc.identifier.citationZhang, L., Xin, M., Teng, J., Chua, S. (2010). Photonic band structure of nanoporous anodized aluminum oxide with radius-to-period ratio modulation. Computational Materials Science 49 (1 SUPPL.) : S153-S156. ScholarBank@NUS Repository. https://doi.org/10.1016/j.commatsci.2010.01.052
dc.identifier.issn09270256
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57054
dc.description.abstractPhotonic band structure and photonic band gap of nanoporous anodized aluminum oxide (np-AAO) based photonic crystals is numerically investigated in detail based on the plane-wave expansion method, with emphasis on the modulation of radius-to-period ratio of the cylindrical holes. This ratio is extremely convenient to be controlled experimentally, which is a unique feature of np-AAO. Transverse-electric and transverse-magnetic polarizations are considered due to the inherent optical anisotropy. Generally, a larger band gap (up to 10%) with wider wavelength range can be generated for TE polarization compared with TM polarization, considering the fairly low dielectric constant contrast. © 2010 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.commatsci.2010.01.052
dc.sourceScopus
dc.subjectAnodized aluminum oxide
dc.subjectPhotonic band gap
dc.subjectPhotonic band structure
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.commatsci.2010.01.052
dc.description.sourcetitleComputational Materials Science
dc.description.volume49
dc.description.issue1 SUPPL.
dc.description.pageS153-S156
dc.description.codenCMMSE
dc.identifier.isiut000281620400032
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