Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1496141
Title: Pattern-induced ripple structures at silicon-oxide/silicon interface by excimer laser irradiation
Authors: Chen, X.Y.
Lu, Y.F. 
Cho, B.J. 
Zeng, Y.P.
Zeng, J.N. 
Wu, Y.H. 
Issue Date: 12-Aug-2002
Citation: Chen, X.Y., Lu, Y.F., Cho, B.J., Zeng, Y.P., Zeng, J.N., Wu, Y.H. (2002-08-12). Pattern-induced ripple structures at silicon-oxide/silicon interface by excimer laser irradiation. Applied Physics Letters 81 (7) : 1344-1346. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1496141
Abstract: Ripple structures by KrF excimer laser irradiation have been observed on a silicon surface capped with a thin layer of patterned silicon oxide. The ripples are highly dependent on the patterns of the silicon oxide. They are centered and enhanced at the boundaries of the opened windows, forming a radial-wavelike structure. The formation of the ripples is attributed to the combined effect of surface stress, surface scattered wave and boundary effects. © 2002 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57001
ISSN: 00036951
DOI: 10.1063/1.1496141
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