Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2907381
Title: N-xhannel GaAs MOSFET with TaNHfAlO gate stack formed using in situ vacuum anneal and silane passivation
Authors: Chin, H.-C.
Zhu, M. 
Samudra, G.S. 
Yeo, Y.-C. 
Issue Date: 2008
Source: Chin, H.-C.,Zhu, M.,Samudra, G.S.,Yeo, Y.-C. (2008). N-xhannel GaAs MOSFET with TaNHfAlO gate stack formed using in situ vacuum anneal and silane passivation. Journal of the Electrochemical Society 155 (7) : H464-H468. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2907381
Abstract: A surface passivation technique for GaAs that comprises in situ vacuum anneal and silane (Si H4) treatment and that is compatible and can be easily integrated with a matured metallorganic chemical vapor deposition high- k gate dielectric process module is demonstrated. Extensive investigation of the dependence of electrical characteristics of TaNHfAlOGaAs gate stacks on process conditions, including in situ vacuum anneal and Si H4 treatment temperatures, postgate-dielectric deposition anneal, and forming gas anneal conditions, is reported. It is shown that excellent capacitance-voltage characteristics with low-frequency dispersion, small hysteresis, and low midgap interface state density Dit of 2.8-4.8× 1011 cm-2 eV-1 can be achieved with optimum processing conditions. The passivation technique reported here enables the fabrication of a self-aligned n-metal oxide semiconductor field-effect transistor, exhibiting good transfer characteristics with high peak carrier mobility of 1154 cm2 V s. The incorporation of Si+ and P+ coimplantation for achievement of high dopant activation in deep source and drain (S/D) regions and complementary metal oxide semiconductor compatible gold-free-based PdGe S/D ohmic contacts were also demonstrated. © 2008 The Electrochemical Society.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/56846
ISSN: 00134651
DOI: 10.1149/1.2907381
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