Please use this identifier to cite or link to this item: https://doi.org/10.1109/JPHOTOV.2012.2218579
Title: Nondestructive defect characterization of saw-damage-etched multicrystalline silicon wafers using scanning electron acoustic microscopy
Authors: Meng, L.
Papa Rao, S.S.
Bhatia, C.S. 
Steen, S.E.
Street, A.G.
Phang, J.C.H. 
Keywords: Multicrystalline silicon
nondestructive defect characterization
saw-damage etch
scanning electron acoustic microscopy (SEAM)
Issue Date: 2013
Source: Meng, L., Papa Rao, S.S., Bhatia, C.S., Steen, S.E., Street, A.G., Phang, J.C.H. (2013). Nondestructive defect characterization of saw-damage-etched multicrystalline silicon wafers using scanning electron acoustic microscopy. IEEE Journal of Photovoltaics 3 (1) : 370-374. ScholarBank@NUS Repository. https://doi.org/10.1109/JPHOTOV.2012.2218579
Abstract: Defects in multicrystalline silicon wafers after saw-damage etch (SDE) for different etch durations are characterized nondestructively using scanning electron acoustic microcopy (SEAM). SEAM is shown to be able to detect both surface and subsurface defects, as well as crystallographic imperfections such as grain boundaries in mc-Si wafers. The capabilities of the SEAM imaging are further extended for investigations of the structural properties of the saw-damage-induced defects and optimization of the SDE process. It is established that SEAM could be effective in determining the optimal SDE etch duration required for the minimization or complete removal of the saw-damage layer. In addition, it also confirms that the SDE process itself does not create new line-like defects. © 2011-2012 IEEE.
Source Title: IEEE Journal of Photovoltaics
URI: http://scholarbank.nus.edu.sg/handle/10635/56809
ISSN: 21563381
DOI: 10.1109/JPHOTOV.2012.2218579
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