Please use this identifier to cite or link to this item:
|Title:||Nondestructive defect characterization of saw-damage-etched multicrystalline silicon wafers using scanning electron acoustic microscopy|
Papa Rao, S.S.
nondestructive defect characterization
scanning electron acoustic microscopy (SEAM)
|Source:||Meng, L., Papa Rao, S.S., Bhatia, C.S., Steen, S.E., Street, A.G., Phang, J.C.H. (2013). Nondestructive defect characterization of saw-damage-etched multicrystalline silicon wafers using scanning electron acoustic microscopy. IEEE Journal of Photovoltaics 3 (1) : 370-374. ScholarBank@NUS Repository. https://doi.org/10.1109/JPHOTOV.2012.2218579|
|Abstract:||Defects in multicrystalline silicon wafers after saw-damage etch (SDE) for different etch durations are characterized nondestructively using scanning electron acoustic microcopy (SEAM). SEAM is shown to be able to detect both surface and subsurface defects, as well as crystallographic imperfections such as grain boundaries in mc-Si wafers. The capabilities of the SEAM imaging are further extended for investigations of the structural properties of the saw-damage-induced defects and optimization of the SDE process. It is established that SEAM could be effective in determining the optimal SDE etch duration required for the minimization or complete removal of the saw-damage layer. In addition, it also confirms that the SDE process itself does not create new line-like defects. © 2011-2012 IEEE.|
|Source Title:||IEEE Journal of Photovoltaics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 7, 2018
WEB OF SCIENCETM
checked on Feb 5, 2018
checked on Mar 11, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.