Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.microrel.2008.07.021
Title: Near-field detection of photon emission from silicon with 30 nm spatial resolution
Authors: Isakov, D.
Tio, A.A.B.
Geinzer, T.
Phang, J.C.H. 
Zhang, Y.
Balk, L.J.
Issue Date: Aug-2008
Source: Isakov, D., Tio, A.A.B., Geinzer, T., Phang, J.C.H., Zhang, Y., Balk, L.J. (2008-08). Near-field detection of photon emission from silicon with 30 nm spatial resolution. Microelectronics Reliability 48 (8-9) : 1285-1288. ScholarBank@NUS Repository. https://doi.org/10.1016/j.microrel.2008.07.021
Abstract: We demonstrate a scanning near-field photon emission microscope (SNPEM) for monitoring photon emission sites with spatial resolution beyond the diffraction limit. Success of SNPEM analysis strongly depends on the sensitivity of photon emission detection. We show that scattering dielectric probe (SDP) is capable of providing both sub-100 nm resolution and compatible sensitivity at emission wavelengths between 1 μm and 1.4 μm. We propose a two step fabrication method which avoids any metal coating and ensures repeatability of parameters of different probes. We also predict that fabrication of SDP from a multi-mode fiber instead of a single mode fiber can significantly improve the collection efficiency of the probe. © 2008 Elsevier Ltd. All rights reserved.
Source Title: Microelectronics Reliability
URI: http://scholarbank.nus.edu.sg/handle/10635/56772
ISSN: 00262714
DOI: 10.1016/j.microrel.2008.07.021
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