Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3633108
Title: N-channel metal-oxide-semiconductor characterization with static and dynamic backside laser reflectance modulation techniques
Authors: Teo, J.K.J.
Chua, C.M.
Koh, L.S.
Phang, J.C.H. 
Issue Date: 29-Aug-2011
Citation: Teo, J.K.J., Chua, C.M., Koh, L.S., Phang, J.C.H. (2011-08-29). N-channel metal-oxide-semiconductor characterization with static and dynamic backside laser reflectance modulation techniques. Applied Physics Letters 99 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3633108
Abstract: An n-channel metal-oxide-semiconductor (NMOS) transistor has been characterized using backside laser reflectance modulation based on static and dynamic techniques. The static techniques do not have the required sensitivity. With the dynamic technique, the reflectance modulations of the channel at different operating points of the NMOS transistor are distinct, with the pinch-off clearly visible. © 2011 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56770
ISSN: 00036951
DOI: 10.1063/1.3633108
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