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|Title:||Nanoelectronic logic device based on the manipulation of magnetic and electric barriers|
|Authors:||Kumar, S.B. |
|Citation:||Kumar, S.B., Tan, S.G., Jalil, M.B.A., Cheung, P.Q., Jiang, Y. (2008). Nanoelectronic logic device based on the manipulation of magnetic and electric barriers. Journal of Applied Physics 103 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2838211|
|Abstract:||We propose a programmable logic device that utilizes magnetoelectric (ME) barriers to realize Boolean functions. We use a high-electron-mobility- transistor in which electron transport in the two-dimensional-electron-gas channel is modulated by applied ME potential barriers via a combination of periodic ferromagnetic and nonmagnetic gates. Electron transmission through the device is calculated based on the minimal-coupling Hamiltonian. The device can be programmed to realize multiple three-input, logic functions, such as OR, AND, NAND, and NOR. The binary logic output of 1/0 corresponds, respectively, to the high/low transmission of electrons through the externally applied barriers. The calculation results show clear binary outputs, with a high (low) state having a transmission probability of T>80% (T<20%). We also studied the effect of varying gate lengths on T. © 2008 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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