Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2838211
Title: Nanoelectronic logic device based on the manipulation of magnetic and electric barriers
Authors: Kumar, S.B. 
Tan, S.G.
Jalil, M.B.A. 
Cheung, P.Q.
Jiang, Y.
Issue Date: 2008
Source: Kumar, S.B., Tan, S.G., Jalil, M.B.A., Cheung, P.Q., Jiang, Y. (2008). Nanoelectronic logic device based on the manipulation of magnetic and electric barriers. Journal of Applied Physics 103 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2838211
Abstract: We propose a programmable logic device that utilizes magnetoelectric (ME) barriers to realize Boolean functions. We use a high-electron-mobility- transistor in which electron transport in the two-dimensional-electron-gas channel is modulated by applied ME potential barriers via a combination of periodic ferromagnetic and nonmagnetic gates. Electron transmission through the device is calculated based on the minimal-coupling Hamiltonian. The device can be programmed to realize multiple three-input, logic functions, such as OR, AND, NAND, and NOR. The binary logic output of 1/0 corresponds, respectively, to the high/low transmission of electrons through the externally applied barriers. The calculation results show clear binary outputs, with a high (low) state having a transmission probability of T>80% (T<20%). We also studied the effect of varying gate lengths on T. © 2008 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/56757
ISSN: 00218979
DOI: 10.1063/1.2838211
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