Please use this identifier to cite or link to this item:
Title: Nanoelectronic logic device based on the manipulation of magnetic and electric barriers
Authors: Kumar, S.B. 
Tan, S.G.
Jalil, M.B.A. 
Cheung, P.Q.
Jiang, Y.
Issue Date: 2008
Citation: Kumar, S.B., Tan, S.G., Jalil, M.B.A., Cheung, P.Q., Jiang, Y. (2008). Nanoelectronic logic device based on the manipulation of magnetic and electric barriers. Journal of Applied Physics 103 (5) : -. ScholarBank@NUS Repository.
Abstract: We propose a programmable logic device that utilizes magnetoelectric (ME) barriers to realize Boolean functions. We use a high-electron-mobility- transistor in which electron transport in the two-dimensional-electron-gas channel is modulated by applied ME potential barriers via a combination of periodic ferromagnetic and nonmagnetic gates. Electron transmission through the device is calculated based on the minimal-coupling Hamiltonian. The device can be programmed to realize multiple three-input, logic functions, such as OR, AND, NAND, and NOR. The binary logic output of 1/0 corresponds, respectively, to the high/low transmission of electrons through the externally applied barriers. The calculation results show clear binary outputs, with a high (low) state having a transmission probability of T>80% (T<20%). We also studied the effect of varying gate lengths on T. © 2008 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
DOI: 10.1063/1.2838211
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Feb 20, 2019


checked on Feb 20, 2019

Page view(s)

checked on Feb 2, 2019

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.