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|Title:||Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template|
|Citation:||Wang, Y.D., Zang, K.Y., Chua, S.J., Tripathy, S., Chen, P., Fonstad, C.G. (2005). Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template. Applied Physics Letters 87 (25) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2147716|
|Abstract:||We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110 nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices. © 2005 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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