Please use this identifier to cite or link to this item: https://doi.org/10.1109/LMWC.2004.834570
Title: Modified class-F distributed amplifier
Authors: Eccleston, K.W. 
Keywords: Class-F amplifiers
Distributed amplifiers
Dual-fed distributed amplifiers
Power combining
Issue Date: Oct-2004
Source: Eccleston, K.W. (2004-10). Modified class-F distributed amplifier. IEEE Microwave and Wireless Components Letters 14 (10) : 481-483. ScholarBank@NUS Repository. https://doi.org/10.1109/LMWC.2004.834570
Abstract: The class-F power amplifier is known for its high efficiency. The class-F single-ended dual-fed distributed amplifier integrates both class-F amplification and efficient power combining in the one circuit, without using additional n-way power combiners. In this letter the earlier reported circuit topology and design method is modified to account for dram parasitic reactances. A 1.8-GHz amplifier employing two packaged field effect transistors was designed and tested. The measured drain dc efficiency and corresponding output power with an input generator available power of 14 dBm was 71% and 22 dBm, respectively.
Source Title: IEEE Microwave and Wireless Components Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56682
ISSN: 15311309
DOI: 10.1109/LMWC.2004.834570
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