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|Title:||Modeling the trap generation and relaxation effects in thin oxides under unipolar and bipolar high-field impulse stressing using stress-induced leakage current|
|Authors:||Chim, W.K. |
|Citation:||Chim, W.K., Tan, Y.N. (2002-12-01). Modeling the trap generation and relaxation effects in thin oxides under unipolar and bipolar high-field impulse stressing using stress-induced leakage current. Journal of Applied Physics 92 (11) : 6636-6645. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1516266|
|Abstract:||The trap generation and relaxation effects in thin oxides under unipolar and bipolar high-field impulse stressing were modeled. The stress-induced leakage current (SILC) was used for the modeling purpose. It was found that when the time between pulses of a periodic ac-pulse stress wave form increases, SILC decreases. The amount of traps generated during write/erase endurance stress of a floating-gate tunnel oxide electrically erasable and programmable read-only memory were also calculated using this model. Results showed that the measured and calculated trap concentrations were in good agreement.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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