Please use this identifier to cite or link to this item:
|Title:||Modeling the trap generation and relaxation effects in thin oxides under unipolar and bipolar high-field impulse stressing using stress-induced leakage current|
|Authors:||Chim, W.K. |
|Source:||Chim, W.K., Tan, Y.N. (2002-12-01). Modeling the trap generation and relaxation effects in thin oxides under unipolar and bipolar high-field impulse stressing using stress-induced leakage current. Journal of Applied Physics 92 (11) : 6636-6645. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1516266|
|Abstract:||The trap generation and relaxation effects in thin oxides under unipolar and bipolar high-field impulse stressing were modeled. The stress-induced leakage current (SILC) was used for the modeling purpose. It was found that when the time between pulses of a periodic ac-pulse stress wave form increases, SILC decreases. The amount of traps generated during write/erase endurance stress of a floating-gate tunnel oxide electrically erasable and programmable read-only memory were also calculated using this model. Results showed that the measured and calculated trap concentrations were in good agreement.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 22, 2018
WEB OF SCIENCETM
checked on Jan 29, 2018
checked on Feb 19, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.