Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1516266
Title: Modeling the trap generation and relaxation effects in thin oxides under unipolar and bipolar high-field impulse stressing using stress-induced leakage current
Authors: Chim, W.K. 
Tan, Y.N.
Issue Date: 1-Dec-2002
Source: Chim, W.K., Tan, Y.N. (2002-12-01). Modeling the trap generation and relaxation effects in thin oxides under unipolar and bipolar high-field impulse stressing using stress-induced leakage current. Journal of Applied Physics 92 (11) : 6636-6645. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1516266
Abstract: The trap generation and relaxation effects in thin oxides under unipolar and bipolar high-field impulse stressing were modeled. The stress-induced leakage current (SILC) was used for the modeling purpose. It was found that when the time between pulses of a periodic ac-pulse stress wave form increases, SILC decreases. The amount of traps generated during write/erase endurance stress of a floating-gate tunnel oxide electrically erasable and programmable read-only memory were also calculated using this model. Results showed that the measured and calculated trap concentrations were in good agreement.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/56677
ISSN: 00218979
DOI: 10.1063/1.1516266
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