Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2010.2047375
Title: Modeling of stress-retarded thermal oxidation of nonplanar silicon structures for realization of nanoscale devices
Authors: Ma, F.-J. 
Rustagi, S.C.
Samudra, G.S. 
Zhao, H.
Singh, N.
Lo, G.-Q.
Kwong, D.-L.
Keywords: 2-D oxidation
Nanowire (NW)
orientation dependence
self-limiting
shape engineering
stress retardation
Issue Date: Jul-2010
Citation: Ma, F.-J., Rustagi, S.C., Samudra, G.S., Zhao, H., Singh, N., Lo, G.-Q., Kwong, D.-L. (2010-07). Modeling of stress-retarded thermal oxidation of nonplanar silicon structures for realization of nanoscale devices. IEEE Electron Device Letters 31 (7) : 719-721. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2047375
Abstract: Accurate modeling of stress-retarded orientation-dependent 2-D oxidation is carried out by matching the experimental and simulated oxide thicknesses of silicon FIN nanostructures over a wide range of temperatures and times in dry oxygen. Experimentally observed initial oxidation rate enhancement, orientation-dependent stress retardation, and self-limiting phenomena are modeled, and a new universal stress retardation parameter set is obtained for the first time. The new parameter set has been validated against oxidation experiments presented here and those reported in the literature. Furthermore, the new model is used to explore silicon nanowire shape engineering. © 2010 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56676
ISSN: 07413106
DOI: 10.1109/LED.2010.2047375
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