Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0022-0248(02)01304-0
Title: MOCVD growth of GaInNAs/GaAs multiple quantum wells with nitrogen composition fluctuation
Authors: Zhou, W.
Chua, S.J. 
Dong, J.R.
Teng, J.H.
Keywords: A1. Localization and activation energy
A1. Photoluminescence
A2. Metalorganic chemical vapor deposition
A3. Quantum wells
Issue Date: Jul-2002
Source: Zhou, W., Chua, S.J., Dong, J.R., Teng, J.H. (2002-07). MOCVD growth of GaInNAs/GaAs multiple quantum wells with nitrogen composition fluctuation. Journal of Crystal Growth 242 (1-2) : 15-19. ScholarBank@NUS Repository. https://doi.org/10.1016/S0022-0248(02)01304-0
Abstract: Room-temperature photoluminescence from the GaInNAs/GaAs multiple quantum wells (MQWs), grown on GaAs substrates by Metalorganic Chemical Vapor Deposition (MOCVD), was investigated as a function of the nitrogen composition. An anomalous wavelength shift in the temperature range <150 K for samples with nitrogen mole fraction > 0.4%, indicates a strong exciton localization effect in the GaInNAs/GaAs MQWs. These localization states arise from nitrogen alloy fluctuation. The thermal activation energy of the MQWs strongly depends on the N composition, in agreement with a large bandgap bowing introduced by N incorporation. Our results indicate that with a N mole fraction of 0.7% in the GaInNAs/GaAs QW, an activation energy of 90 meV is achieved which can improve the thermal characteristics of the device. © 2002 Elsevier Science B.V. All rights reserved.
Source Title: Journal of Crystal Growth
URI: http://scholarbank.nus.edu.sg/handle/10635/56651
ISSN: 00220248
DOI: 10.1016/S0022-0248(02)01304-0
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