Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.74.184426
Title: Magnetoresistance effects arising from interfacial resistance in a current-perpendicular-to-plane spin-valve trilayer
Authors: Kumar, S.B. 
Jalil, M.B.A. 
Tan, S.G. 
Leong, Z.Y.
Issue Date: 2006
Citation: Kumar, S.B., Jalil, M.B.A., Tan, S.G., Leong, Z.Y. (2006). Magnetoresistance effects arising from interfacial resistance in a current-perpendicular-to-plane spin-valve trilayer. Physical Review B - Condensed Matter and Materials Physics 74 (18) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.74.184426
Abstract: We present a theoretical analysis of spin transport and magnetoresistance (MR) of a pseudo-spin-valve trilayer device, taking into account the effects of interfacial resistances between layers. We based our analysis on spin-drift diffusion models in the limit of finite, as well as infinite, spin-relaxation length λ. In both cases, we show that MR declines with increasing interfacial resistance (IR) when the spin polarization of the ferromagnetic (FM) material is lower than a critical value. We derive the critical IR analytically, and explain these effects in terms of the relative contribution of bulk FM and IR in providing spin-dependent scattering. We observed that at very high IR, MR is always suppressed regardless of the spin-polarization ratio of the IR/FM layers. This is because high IR reduces the effect of electron spin-flip resistance, thus amplifying electron spin flipping. © 2006 The American Physical Society.
Source Title: Physical Review B - Condensed Matter and Materials Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/56575
ISSN: 10980121
DOI: 10.1103/PhysRevB.74.184426
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