Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.75.144430
Title: Magnetization switching in alternating width nanowire arrays
Authors: Goolaup, S. 
Adeyeye, A.O. 
Singh, N.
Gubbiotti, G.
Issue Date: 30-Apr-2007
Source: Goolaup, S., Adeyeye, A.O., Singh, N., Gubbiotti, G. (2007-04-30). Magnetization switching in alternating width nanowire arrays. Physical Review B - Condensed Matter and Materials Physics 75 (14) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.75.144430
Abstract: A systematic investigation of the magnetization reversal mechanism in arrays of Ni80 Fe20 nanowires with alternating width is presented. The structures were fabricated using deep ultraviolet lithography followed by lift-off technique at 248 nm exposure wavelength. We have mapped the magnetization reversal processes and observed that the switching mechanism is very sensitive to the thickness to width ratio of the nanowires. For wire thickness, t≤40 nm, spin rotation dominates the reversal process. For t>40 nm, however, the reversal process is mediated by the curling mode of reversal. The dipolar field is strongly influenced by the nanowire of larger width in the alternating width array. Our results were compared with homogeneous width nanowire array of similar thicknesses and marked differences were observed. © 2007 The American Physical Society.
Source Title: Physical Review B - Condensed Matter and Materials Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/56567
ISSN: 10980121
DOI: 10.1103/PhysRevB.75.144430
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