Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2885078
Title: Magnetization reversal process in elongated Co rings with engineered defects
Authors: Gao, X.S. 
Adeyeye, A.O. 
Ross, C.A.
Issue Date: 2008
Source: Gao, X.S., Adeyeye, A.O., Ross, C.A. (2008). Magnetization reversal process in elongated Co rings with engineered defects. Journal of Applied Physics 103 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2885078
Abstract: We report a significant modification of the magnetization reversal process in thin film rings with engineered defects created by a focused ion beam. Using magnetic force microscopy, with in situ in-plane field, we observe that the traditional onion-vortex transition that occurs in defect-free rings can be suppressed, and the reversal instead takes place through domain wall motion. We have also investigated the effects of defect size, location, and distribution on the overall magnetization state. The results are explained in terms of pinning of domain walls by the engineered defects. © 2008 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/56566
ISSN: 00218979
DOI: 10.1063/1.2885078
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