Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3056400
Title: Magnetization reversal in exchange biased antidot arrays
Authors: Tripathy, D. 
Adeyeye, A.O. 
Issue Date: 2009
Source: Tripathy, D., Adeyeye, A.O. (2009). Magnetization reversal in exchange biased antidot arrays. Journal of Applied Physics 105 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3056400
Abstract: A systematic study of the exchange bias effects in arrays of Cu (10 nm) NiFe (30 nm) IrMn (tIrMn) Cu (2 nm) nanoscale antidot arrays prepared by deep ultraviolet lithography is presented. The magnetic properties of the antidot arrays are compared to that of a continuous film of identical composition. We observed that the antidots demonstrate higher coercivity and exchange bias fields. This enhancement in the exchange bias field, and the relative evolution of exchange bias field with the IrMn layer thickness tIrMn for both the antidot array and the continuous film, is attributed to the physical limitations imposed on the IrMn domain size by the reduced lateral dimensions of the antidots. Magnetoresistance measurements further corroborate the results obtained from the hysteresis loops. © 2009 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/56564
ISSN: 00218979
DOI: 10.1063/1.3056400
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