Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2006.877283
Title: Low-frequency noise measurement and analysis in organic light-emitting diodes
Authors: Ke, L.
Zhao, X.Y.
Kumar, R.S.
Chua, S.J. 
Keywords: 1/f noise
Low-frequency noise
Organic light-emitting diode (OLED)
Issue Date: Jul-2006
Source: Ke, L., Zhao, X.Y., Kumar, R.S., Chua, S.J. (2006-07). Low-frequency noise measurement and analysis in organic light-emitting diodes. IEEE Electron Device Letters 27 (7) : 555-557. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.877283
Abstract: Low-frequency noise characteristics of organic light-emitting diodes are investigated. Two noise components were found in experimental low-frequency noise records, namely: 1) 1/f Gaussian noise from device bulk materials and 2) an excessive frequency-related part of noise related to device interfaces or defects and traps. 1/f noise is said to be related to carrier mobility. Degradation, especially photo-oxidation of the electroluminescence polymer, is a possible reason that affects carrier mobility. The excessive part of noise is believed to be related to the carrier numbers and could come from the interface deterioration, defects and traps generation and furnish. The excessive part of noise increases much faster during device stress. This shows that the degradation related interface defects and traps is much faster. © 2006 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56533
ISSN: 07413106
DOI: 10.1109/LED.2006.877283
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