Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2970958
Title: Low Schottky barrier height for silicides on n -type Si (100) by interfacial selenium segregation during silicidation
Authors: Wong, H.-S.
Chan, L.
Samudra, G. 
Yeo, Y.-C. 
Issue Date: 2008
Source: Wong, H.-S., Chan, L., Samudra, G., Yeo, Y.-C. (2008). Low Schottky barrier height for silicides on n -type Si (100) by interfacial selenium segregation during silicidation. Applied Physics Letters 93 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2970958
Abstract: The electron Schottky barrier height Bn modulation for NiSi and PtSi formed on selenium-implanted n -type Si (100) has been experimentally investigated. Selenium (Se) segregation is observed at the silicide/n-Si (100) interface during silicidation process. Bn of 83 and 120 meV were achieved for Se segregated NiSi and PtSi on n-Si (100) interfaces, respectively. Contrary to previously reported Fermi level depinning effect in monolayer Se-passivated n-Si (100), the low Bn achieved in this work points to metal silicide Fermi level pinning near to conduction band EC of n-Si (100). © 2008 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56529
ISSN: 00036951
DOI: 10.1063/1.2970958
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