Please use this identifier to cite or link to this item:
|Title:||Low Schottky barrier height for silicides on n -type Si (100) by interfacial selenium segregation during silicidation|
|Citation:||Wong, H.-S., Chan, L., Samudra, G., Yeo, Y.-C. (2008). Low Schottky barrier height for silicides on n -type Si (100) by interfacial selenium segregation during silicidation. Applied Physics Letters 93 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2970958|
|Abstract:||The electron Schottky barrier height Bn modulation for NiSi and PtSi formed on selenium-implanted n -type Si (100) has been experimentally investigated. Selenium (Se) segregation is observed at the silicide/n-Si (100) interface during silicidation process. Bn of 83 and 120 meV were achieved for Se segregated NiSi and PtSi on n-Si (100) interfaces, respectively. Contrary to previously reported Fermi level depinning effect in monolayer Se-passivated n-Si (100), the low Bn achieved in this work points to metal silicide Fermi level pinning near to conduction band EC of n-Si (100). © 2008 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 23, 2019
WEB OF SCIENCETM
checked on Feb 13, 2019
checked on Feb 9, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.