Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3584856
Title: Local stress induced by diamond-like carbon liner in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors and impact on electrical characteristics
Authors: Liu, X.
Liu, B.
Low, E.K.F.
Liu, W.
Yang, M.
Tan, L.-S. 
Teo, K.L. 
Yeo, Y.-C. 
Issue Date: 2-May-2011
Source: Liu, X., Liu, B., Low, E.K.F., Liu, W., Yang, M., Tan, L.-S., Teo, K.L., Yeo, Y.-C. (2011-05-02). Local stress induced by diamond-like carbon liner in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors and impact on electrical characteristics. Applied Physics Letters 98 (18) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3584856
Abstract: The device physics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) with localized stress introduced by a diamond-like carbon (DLC) liner or encapsulation layer was investigated. DLC film with high intrinsic compressive stress (∼6GPa) formed over AlGaN/GaN MOS-HEMTs contributed local compressive stress in the channel region. This was found to reduce the two-dimensional electron gas (2-DEG) density in the channel, leading to a positive threshold voltage shift. Transconductance and drain current at a given gate overdrive were also improved. On the other hand, the DLC introduced local tensile stress in the region between the gate and source/drain contacts, leading to a localized increase in 2-DEG density, giving reduced series resistance. The results of this work are expected to be useful for strain engineering of AlGaN/GaN MOS-HEMTs. © 2011 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56512
ISSN: 00036951
DOI: 10.1063/1.3584856
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