Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3276074
Title: Linearly polarized light emission from InGaN light emitting diode with subwavelength metallic nanograting
Authors: Zhang, L.
Teng, J.H.
Chua, S.J. 
Fitzgerald, E.A.
Issue Date: 2009
Source: Zhang, L., Teng, J.H., Chua, S.J., Fitzgerald, E.A. (2009). Linearly polarized light emission from InGaN light emitting diode with subwavelength metallic nanograting. Applied Physics Letters 95 (26) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3276074
Abstract: Surface emitting linearly polarized InGaN/GaN light emitting diode (LED) is demonstrated using a subwavelength metallic nanograting. The aluminum based grating with a period of 150 nm is fabricated on top of the p -contact layer in a conventional InGaN LED structure grown on (0001) oriented sapphire substrate. Polarization ratio can reach 7:1, the highest ever reported polarization ratio directly from a light emitting diode. The polarization characteristics are studied in details both experimentally and theoretically, suggesting an effective way to make polarized light emission devices. © 2009 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56500
ISSN: 00036951
DOI: 10.1063/1.3276074
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