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|Title:||Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon sourcedrain stressors|
|Source:||Ang, K.-W., Chui, K.-J., Bliznetsov, V., Tung, C.-H., Du, A., Balasubramanian, N., Samudra, G., Li, M.F., Yeo, Y.-C. (2005-02-28). Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon sourcedrain stressors. Applied Physics Letters 86 (9) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1871351|
|Abstract:||We report the characterization of strain components in transistor structures with silicon-germanium (Si0.75 Ge0.25) and silicon-carbon (Si0.99 C0.01) stressors grown by selective epitaxy in the source and drain regions. The spacing between the source and drain stressors is 35 nm. Lattice strain analysis was performed using high-resolution transmission electron microscopy (HRTEM) and diffractograms obtained by fast Fourier transform of HRTEM images. The lateral strain component εxx and the vertical strain component εzz were derived from the (220) and (002) reflections in the diffractogram, respectively. SiGe source and drain stressors lead to lateral compressive strain and vertical tensile strain in the Si channel. On the other hand, the SiC source and drain stressors give rise to lateral tensile strain and vertical compressive strain in the Si channel, an effect complementary to that of SiGe sourcedrain stressors. The results of this work will be useful for channel strain engineering in complementary metal-oxide-semiconductor transistors. © 2005 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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