Please use this identifier to cite or link to this item: https://doi.org/5/055601
Title: Lateral ZnO nanowire growth on a planar substrate using a growth barrier
Authors: Law, J.B.K.
Thong, J.T.L. 
Issue Date: 7-Feb-2007
Source: Law, J.B.K.,Thong, J.T.L. (2007-02-07). Lateral ZnO nanowire growth on a planar substrate using a growth barrier. Nanotechnology 18 (5) : -. ScholarBank@NUS Repository. https://doi.org/5/055601
Abstract: In this work, we present a technique to confine zinc oxide (ZnO) nanowires to lateral growth while suppressing nanowire growth on the top surface of a planar substrate through the use of a growth barrier. Physical-vapour-deposited silicon dioxide and spin-on-glass dielectric were evaluated, and both have proven themselves as effective growth barriers. Through a simple oxidation process, ZnO nanowires, with typical diameters in the range of 20-40 nm, will grow laterally from selectively exposed zinc edges on otherwise encapsulated zinc lines. X-ray diffraction measurements show that the as-grown nanowires belong to the crystalline hexagonal-structured ZnO. This simple and cost-effective fabrication process, coupled with its process compatibility with existing silicon technology and its scalable nature, is a viable processing technique to selectively grow lateral ZnO nanowires on a planar substrate, with potential applications in nanowire devices. © IOP Publishing Ltd.
Source Title: Nanotechnology
URI: http://scholarbank.nus.edu.sg/handle/10635/56469
ISSN: 09574484
DOI: 5/055601
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