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|Title:||Lateral ZnO nanowire growth on a planar substrate using a growth barrier|
|Citation:||Law, J.B.K., Thong, J.T.L. (2007-02-07). Lateral ZnO nanowire growth on a planar substrate using a growth barrier. Nanotechnology 18 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0957-4484/18/5/055601|
|Abstract:||In this work, we present a technique to confine zinc oxide (ZnO) nanowires to lateral growth while suppressing nanowire growth on the top surface of a planar substrate through the use of a growth barrier. Physical-vapour-deposited silicon dioxide and spin-on-glass dielectric were evaluated, and both have proven themselves as effective growth barriers. Through a simple oxidation process, ZnO nanowires, with typical diameters in the range of 20-40 nm, will grow laterally from selectively exposed zinc edges on otherwise encapsulated zinc lines. X-ray diffraction measurements show that the as-grown nanowires belong to the crystalline hexagonal-structured ZnO. This simple and cost-effective fabrication process, coupled with its process compatibility with existing silicon technology and its scalable nature, is a viable processing technique to selectively grow lateral ZnO nanowires on a planar substrate, with potential applications in nanowire devices. © IOP Publishing Ltd.|
|Appears in Collections:||Staff Publications|
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