Please use this identifier to cite or link to this item:
Title: Investigation of V-defects formation in InGaN/GaN multiple quantum well grown on sapphire
Authors: Yong, A.M.
Soh, C.B.
Zhang, X.H.
Chow, S.Y.
Chua, S.J. 
Keywords: InGaN/GaN heterostructures
Multiple quantum wells
Issue Date: 26-Mar-2007
Citation: Yong, A.M., Soh, C.B., Zhang, X.H., Chow, S.Y., Chua, S.J. (2007-03-26). Investigation of V-defects formation in InGaN/GaN multiple quantum well grown on sapphire. Thin Solid Films 515 (10) : 4496-4500. ScholarBank@NUS Repository.
Abstract: In the growth of InGaN multiple quantum well structure, V-pits has been observed to be initiated at the threading dislocations which propagate to the quantum well layers with high indium composition and substantially thick InGaN well. A set of samples with varying indium well thickness (3-7.6 nm) and composition (10-30%) are grown and characterized by photoluminescence (PL), X-ray diffraction, transmission electron microscopy and atomic force microscopy. The indium content and the layer thicknesses in InGaN/GaN quantum well are determined by high-resolution X-ray diffraction (XRD) and TEM imaging. With indium composition exceeding 10%, strain at the InGaN/GaN interface leads to the generation of V-pits at the interlayers of the MQW. Higher indium composition and increase in thickness of a period (InGaN well plus the GaN barrier) appear to enhance pits generation. With thicker InGaN well and reduction in thickness of GaN to InGaN (or the R ratio), pit density is substantially reduced, but it results in greater inhomogeneity in the distribution of indium in the InGaN well. This leads to a broadened PL emission and affect the PL emission intensity. © 2006 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
ISSN: 00406090
DOI: 10.1016/j.tsf.2006.07.181
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Oct 15, 2018


checked on Oct 15, 2018

Page view(s)

checked on Sep 22, 2018

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.