Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2006.07.181
Title: Investigation of V-defects formation in InGaN/GaN multiple quantum well grown on sapphire
Authors: Yong, A.M.
Soh, C.B.
Zhang, X.H.
Chow, S.Y.
Chua, S.J. 
Keywords: InGaN/GaN heterostructures
Multiple quantum wells
Photoluminescence
V-defects
Issue Date: 26-Mar-2007
Source: Yong, A.M., Soh, C.B., Zhang, X.H., Chow, S.Y., Chua, S.J. (2007-03-26). Investigation of V-defects formation in InGaN/GaN multiple quantum well grown on sapphire. Thin Solid Films 515 (10) : 4496-4500. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2006.07.181
Abstract: In the growth of InGaN multiple quantum well structure, V-pits has been observed to be initiated at the threading dislocations which propagate to the quantum well layers with high indium composition and substantially thick InGaN well. A set of samples with varying indium well thickness (3-7.6 nm) and composition (10-30%) are grown and characterized by photoluminescence (PL), X-ray diffraction, transmission electron microscopy and atomic force microscopy. The indium content and the layer thicknesses in InGaN/GaN quantum well are determined by high-resolution X-ray diffraction (XRD) and TEM imaging. With indium composition exceeding 10%, strain at the InGaN/GaN interface leads to the generation of V-pits at the interlayers of the MQW. Higher indium composition and increase in thickness of a period (InGaN well plus the GaN barrier) appear to enhance pits generation. With thicker InGaN well and reduction in thickness of GaN to InGaN (or the R ratio), pit density is substantially reduced, but it results in greater inhomogeneity in the distribution of indium in the InGaN well. This leads to a broadened PL emission and affect the PL emission intensity. © 2006 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/56409
ISSN: 00406090
DOI: 10.1016/j.tsf.2006.07.181
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