Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2159567
Title: Investigation of silicon diffusion into yttrium using x-ray photoelectron spectroscopy
Authors: Chiam, S.Y.
Chim, W.K. 
Huan, A.C.H.
Pan, J.S.
Zhang, J.
Issue Date: 2006
Citation: Chiam, S.Y., Chim, W.K., Huan, A.C.H., Pan, J.S., Zhang, J. (2006). Investigation of silicon diffusion into yttrium using x-ray photoelectron spectroscopy. Applied Physics Letters 88 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2159567
Abstract: The reactions of yttrium (Y) metal on silicon (Si) are investigated by x-ray photoelectron spectroscopy (XPS). Low-temperature annealing studies are performed to investigate the diffusion of Si. It is found that Si diffusion occurs even under low annealing temperatures of <300 °C in an ultrahigh vacuum environment. This is attributed to the weakening of the Si-Si covalent bonds by metallic Y. XPS depth profiling of room-temperature-oxidized films revealed a possible oxygen-mediated pathway which allowed significant Si diffusion at room temperature for silicate formation. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56402
ISSN: 00036951
DOI: 10.1063/1.2159567
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