Please use this identifier to cite or link to this item:
|Title:||Investigation of silicon diffusion into yttrium using x-ray photoelectron spectroscopy|
|Citation:||Chiam, S.Y., Chim, W.K., Huan, A.C.H., Pan, J.S., Zhang, J. (2006). Investigation of silicon diffusion into yttrium using x-ray photoelectron spectroscopy. Applied Physics Letters 88 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2159567|
|Abstract:||The reactions of yttrium (Y) metal on silicon (Si) are investigated by x-ray photoelectron spectroscopy (XPS). Low-temperature annealing studies are performed to investigate the diffusion of Si. It is found that Si diffusion occurs even under low annealing temperatures of <300 °C in an ultrahigh vacuum environment. This is attributed to the weakening of the Si-Si covalent bonds by metallic Y. XPS depth profiling of room-temperature-oxidized films revealed a possible oxygen-mediated pathway which allowed significant Si diffusion at room temperature for silicate formation. © 2006 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 19, 2018
WEB OF SCIENCETM
checked on Jun 25, 2018
checked on Jun 30, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.