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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1391225
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dc.titleInvestigation of Li-doped ferroelectric and piezoelectric ZnO films by electric force microscopy and Raman spectroscopy
dc.contributor.authorNi, H.Q.
dc.contributor.authorLu, Y.F.
dc.contributor.authorLiu, Z.Y.
dc.contributor.authorQiu, H.
dc.contributor.authorWang, W.J.
dc.contributor.authorRen, Z.M.
dc.contributor.authorChow, S.K.
dc.contributor.authorJie, Y.X.
dc.date.accessioned2014-06-17T02:54:09Z
dc.date.available2014-06-17T02:54:09Z
dc.date.issued2001-08-06
dc.identifier.citationNi, H.Q., Lu, Y.F., Liu, Z.Y., Qiu, H., Wang, W.J., Ren, Z.M., Chow, S.K., Jie, Y.X. (2001-08-06). Investigation of Li-doped ferroelectric and piezoelectric ZnO films by electric force microscopy and Raman spectroscopy. Applied Physics Letters 79 (6) : 812-814. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1391225
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/56400
dc.description.abstractWe have grown Li-doped ZnO films on silicon (100) using the rf planar magnetron sputtering method. The surface charges induced piezoelectrically by defect and by polarization can be observed by electric force microscopy. The Li-doped ZnO films have been proven to be ferroelectric. The Raman spectra of ZnO and Li-doped ZnO films have been measured. © 2001 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1391225
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentDATA STORAGE INSTITUTE
dc.description.doi10.1063/1.1391225
dc.description.sourcetitleApplied Physics Letters
dc.description.volume79
dc.description.issue6
dc.description.page812-814
dc.description.codenAPPLA
dc.identifier.isiut000170223100037
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