Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.50.082302
DC FieldValue
dc.titleInverted organic photovoltaic cells with solution-processed zinc oxide as electron collecting layer
dc.contributor.authorZhang, C.
dc.contributor.authorYou, H.
dc.contributor.authorLin, Z.
dc.contributor.authorHao, Y.
dc.date.accessioned2014-06-17T02:54:04Z
dc.date.available2014-06-17T02:54:04Z
dc.date.issued2011-08
dc.identifier.citationZhang, C., You, H., Lin, Z., Hao, Y. (2011-08). Inverted organic photovoltaic cells with solution-processed zinc oxide as electron collecting layer. Japanese Journal of Applied Physics 50 (8 PART 1) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.50.082302
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/56392
dc.description.abstractIn this work, inverted polymerfullerene organic photovoltaic (OPV) cells with solution-processed zinc oxide (ZnO) as the electron collecting layer are investigated. ZnO films are prepared simply by the spin-casting of a zinc acetate dehydrate precursor solution, followed by sintering under ambient conditions. The performance of the fabricated inverted OPV cells shows a clear dependence on precursor concentration and sintering conditions. With the ZnO film derived from a sol-gel concentration of 0.1 M and sintered at 350°C for 10min, the inverted OPV cell shows optimum performance. © 2011 The Japan Society of Applied Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1143/JJAP.50.082302
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1143/JJAP.50.082302
dc.description.sourcetitleJapanese Journal of Applied Physics
dc.description.volume50
dc.description.issue8 PART 1
dc.description.page-
dc.identifier.isiut000294336600039
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.