Please use this identifier to cite or link to this item:
|Title:||Interference lithographically defined and catalytically etched, large-area silicon nanocones from nanowires|
|Source:||Dawood, M.K.,Liew, T.H.,Lianto, P.,Hong, M.H.,Tripathy, S.,Thong, J.T.L.,Choi, W.K. (2010). Interference lithographically defined and catalytically etched, large-area silicon nanocones from nanowires. Nanotechnology 21 (20) : -. ScholarBank@NUS Repository. https://doi.org/20/205305|
|Abstract:||We report a simple and cost effective method for the synthesis of large-area, precisely located silicon nanocones from nanowires. The nanowires were obtained from our interference lithography and catalytic etching (IL-CE) method. We found that porous silicon was formed near the Au catalyst during the fabrication of the nanowires. The porous silicon exhibited enhanced oxidation ability when exposed to atmospheric conditions or in wet oxidation ambient. Very well located nanocones with uniform sharpness resulted when these oxidized nanowires were etched in 10% HF. Nanocones of different heights were obtained by varying the doping concentration of the silicon wafers. We believe this is a novel method of producing large-area, low cost, well defined nanocones from nanowires both in terms of the control of location and shape of the nanocones. A wide range of potential applications of the nanocone array can be found as a master copy for nanoimprinted polymer substrates for possible biomedical research; as a candidate for making sharp probes for scanning probe nanolithography; or as a building block for field emitting tips or photodetectors in electronic/optoelectronic applications. © 2010 IOP Publishing Ltd.|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 15, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.