Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.susc.2012.07.007
Title: Interfacial-layer-free growth of yttrium oxide on germanium by understanding initial surface reactions
Authors: Liu, Z.Q.
Chim, W.K. 
Chiam, S.Y.
Pan, J.S.
Chun, S.R.
Liu, Q.
Ng, C.M.
Keywords: Germanium
Interfacial layer
Oxidation
X-ray photoelectron spectroscopy
Yttrium
Yttrium germanate
Yttrium germanide
Yttrium oxide
Issue Date: Nov-2012
Source: Liu, Z.Q.,Chim, W.K.,Chiam, S.Y.,Pan, J.S.,Chun, S.R.,Liu, Q.,Ng, C.M. (2012-11). Interfacial-layer-free growth of yttrium oxide on germanium by understanding initial surface reactions. Surface Science 606 (21-22) : 1638-1642. ScholarBank@NUS Repository. https://doi.org/10.1016/j.susc.2012.07.007
Abstract: In this study, we investigate the surface and interfacial reactions involved in the growth of yttrium oxide through the oxidation of yttrium metal on germanium. Our combined understanding of the oxidation and interfacial reactions allows us to introduce a layer-by-layer method to grow an interfacial-layer-free yttrium oxide on germanium at room temperature, which has previously proven to be difficult. During initial growth, we show evidence that yttrium germanide provides the lowest kinetic pathway in the formation of the yttrium germanate interfacial layer and explain how this pathway can be avoided using our layer-by-layer method. This method can possibly be used to achieve interfacial-layer-free growth for other metal oxides on semiconductors. © 2012 Elsevier B.V. All rights reserved.
Source Title: Surface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/56372
ISSN: 00396028
DOI: 10.1016/j.susc.2012.07.007
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

4
checked on Dec 13, 2017

WEB OF SCIENCETM
Citations

4
checked on Nov 3, 2017

Page view(s)

22
checked on Dec 9, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.