Please use this identifier to cite or link to this item:
|Title:||Interfacial-layer-free growth of yttrium oxide on germanium by understanding initial surface reactions|
X-ray photoelectron spectroscopy
|Source:||Liu, Z.Q.,Chim, W.K.,Chiam, S.Y.,Pan, J.S.,Chun, S.R.,Liu, Q.,Ng, C.M. (2012-11). Interfacial-layer-free growth of yttrium oxide on germanium by understanding initial surface reactions. Surface Science 606 (21-22) : 1638-1642. ScholarBank@NUS Repository. https://doi.org/10.1016/j.susc.2012.07.007|
|Abstract:||In this study, we investigate the surface and interfacial reactions involved in the growth of yttrium oxide through the oxidation of yttrium metal on germanium. Our combined understanding of the oxidation and interfacial reactions allows us to introduce a layer-by-layer method to grow an interfacial-layer-free yttrium oxide on germanium at room temperature, which has previously proven to be difficult. During initial growth, we show evidence that yttrium germanide provides the lowest kinetic pathway in the formation of the yttrium germanate interfacial layer and explain how this pathway can be avoided using our layer-by-layer method. This method can possibly be used to achieve interfacial-layer-free growth for other metal oxides on semiconductors. © 2012 Elsevier B.V. All rights reserved.|
|Source Title:||Surface Science|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 13, 2017
WEB OF SCIENCETM
checked on Nov 3, 2017
checked on Dec 9, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.