Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2822422
Title: Interfacial characteristics and band alignments for Zr O2 gate dielectric on Si passivated p-GaAs substrate
Authors: Dalapati, G.K.
Sridhara, A.
Wong, A.S.W.
Chia, C.K.
Lee, S.J. 
Chi, D.
Issue Date: 2007
Source: Dalapati, G.K., Sridhara, A., Wong, A.S.W., Chia, C.K., Lee, S.J., Chi, D. (2007). Interfacial characteristics and band alignments for Zr O2 gate dielectric on Si passivated p-GaAs substrate. Applied Physics Letters 91 (24) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2822422
Abstract: The interfacial characteristics and band alignments of high- k Zr O2 on p-GaAs have been investigated by using x-ray photoelectron spectroscopy and electrical measurements. It has been demonstrated that the presence of Si interfacial passivation layer (IPL) improves GaAs metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, and hysteresis. It is also found that Si IPL can reduce interfacial GaAs-oxide formation and increases effective valence-band offset at Zr O2 p-GaAs interface. The effective valence-band offsets of Zr O2 p-GaAs and Zr O2 Sip-GaAs interfaces are determined to be 2.7 and 2.84 eV, while the effective conduction-band offsets are found to be 1.67 and 1.53 eV, respectively. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56370
ISSN: 00036951
DOI: 10.1063/1.2822422
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