Please use this identifier to cite or link to this item: https://doi.org/10.1109/TR.2002.804485
Title: Interaction of interface-traps located at various sites in MOSFETs under stress
Authors: Chen, G.
Li, M.F. 
Jin, Y.
Keywords: Annealing
Hot carrier
MOSFET
Semiconductor device reliability
Semiconductor-insulator interface
Issue Date: Dec-2002
Source: Chen, G., Li, M.F., Jin, Y. (2002-12). Interaction of interface-traps located at various sites in MOSFETs under stress. IEEE Transactions on Reliability 51 (4) : 387-391. ScholarBank@NUS Repository. https://doi.org/10.1109/TR.2002.804485
Abstract: Interaction of interface traps at different sites in p-MOS transistors under electrical stresses was observed. We report the following phenomenon: generation of interface traps in the basewell-channel (BC) region under Fowler-Nordheim (FN) stress causes reduction and migration of interface traps in the drain junction space charge (JSC) region induced by hot carrier (HC) stress. This phenomenon is tentatively interpreted by a 3-cell difference model of hydrogen release and absorption during interface trap generation and passivation. This effect is important in hot carrier degradation and lifetime projection in MOS transistors.
Source Title: IEEE Transactions on Reliability
URI: http://scholarbank.nus.edu.sg/handle/10635/56362
ISSN: 00189529
DOI: 10.1109/TR.2002.804485
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