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|Title:||Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques|
|Authors:||Oh, H.J. |
|Citation:||Oh, H.J., Choi, K.J., Loh, W.Y., Htoo, T., Chua, S.J., Cho, B.J. (2007). Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques. Journal of Applied Physics 102 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2777401|
|Abstract:||A GaAs defect-free epitaxial layer has been grown on Si via a Ge concentration graded SiGe on insulator (SGOI) for application in high channel-mobility metal-oxide-semiconductor field effect transistor. The SGOI layer, 42 nm thick, serves as the compliant and intermediate buffer to reduce the lattice and thermal expansion mismatches between Si and GaAs. A modified two-step Ge condensation technique achieves the surface Ge concentration in SGOI as high as 71%. It is also found that low-temperature migration enhanced epitaxy during the initial GaAs nucleation on the SGOI surface is critical to obtain a device quality GaAs layer by epitaxial growth. © 2007 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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