Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2777401
Title: Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques
Authors: Oh, H.J. 
Choi, K.J.
Loh, W.Y.
Htoo, T. 
Chua, S.J. 
Cho, B.J. 
Issue Date: 2007
Source: Oh, H.J.,Choi, K.J.,Loh, W.Y.,Htoo, T.,Chua, S.J.,Cho, B.J. (2007). Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques. Journal of Applied Physics 102 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2777401
Abstract: A GaAs defect-free epitaxial layer has been grown on Si via a Ge concentration graded SiGe on insulator (SGOI) for application in high channel-mobility metal-oxide-semiconductor field effect transistor. The SGOI layer, 42 nm thick, serves as the compliant and intermediate buffer to reduce the lattice and thermal expansion mismatches between Si and GaAs. A modified two-step Ge condensation technique achieves the surface Ge concentration in SGOI as high as 71%. It is also found that low-temperature migration enhanced epitaxy during the initial GaAs nucleation on the SGOI surface is critical to obtain a device quality GaAs layer by epitaxial growth. © 2007 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/56353
ISSN: 00218979
DOI: 10.1063/1.2777401
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