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|Title:||Integrated Antennas on Si With over 100 GHz Performance, Fabricated Using an Optimized Proton Implantation Process|
|Citation:||Chan, K.T., Chin, A., Lin, Y.D., Chang, C.Y., Zhu, C.X., Li, M.F., Kwong, D.L., McAlister, S., Duh, D.S., Lin, W.J. (2003-11). Integrated Antennas on Si With over 100 GHz Performance, Fabricated Using an Optimized Proton Implantation Process. IEEE Microwave and Wireless Components Letters 13 (11) : 487-489. ScholarBank@NUS Repository. https://doi.org/10.1109/LMWC.2003.817146|
|Abstract:||We have improved the performance of integrated antennas on Si for possible application in wireless communications and wireless interconnects. For practical VLSI integration, we have reduced the antenna size and optimized the proton implantation to a low energy of ∼ 4 MeV with a depth of ∼ 175 μm. To avoid any possible contamination, the ion implantation is applied after device fabrication. Excellent performance such as very low RF power loss up to 50 GHz, record high 103 GHz antenna resonance, and sharp 5 GHz bandwidth have been achieved.|
|Source Title:||IEEE Microwave and Wireless Components Letters|
|Appears in Collections:||Staff Publications|
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