Please use this identifier to cite or link to this item: https://doi.org/10.1109/LMWC.2003.817146
Title: Integrated Antennas on Si With over 100 GHz Performance, Fabricated Using an Optimized Proton Implantation Process
Authors: Chan, K.T.
Chin, A.
Lin, Y.D.
Chang, C.Y.
Zhu, C.X. 
Li, M.F. 
Kwong, D.L.
McAlister, S.
Duh, D.S.
Lin, W.J.
Keywords: Antenna
Implantation
Loss
RF
Transmission line
Issue Date: Nov-2003
Source: Chan, K.T., Chin, A., Lin, Y.D., Chang, C.Y., Zhu, C.X., Li, M.F., Kwong, D.L., McAlister, S., Duh, D.S., Lin, W.J. (2003-11). Integrated Antennas on Si With over 100 GHz Performance, Fabricated Using an Optimized Proton Implantation Process. IEEE Microwave and Wireless Components Letters 13 (11) : 487-489. ScholarBank@NUS Repository. https://doi.org/10.1109/LMWC.2003.817146
Abstract: We have improved the performance of integrated antennas on Si for possible application in wireless communications and wireless interconnects. For practical VLSI integration, we have reduced the antenna size and optimized the proton implantation to a low energy of ∼ 4 MeV with a depth of ∼ 175 μm. To avoid any possible contamination, the ion implantation is applied after device fabrication. Excellent performance such as very low RF power loss up to 50 GHz, record high 103 GHz antenna resonance, and sharp 5 GHz bandwidth have been achieved.
Source Title: IEEE Microwave and Wireless Components Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56347
ISSN: 15311309
DOI: 10.1109/LMWC.2003.817146
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