Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevLett.108.195502
Title: Influence of the narrow {111} planes on axial and planar ion channeling
Authors: Motapothula, M.
Dang, Z.Y.
Venkatesan, T. 
Breese, M.B.H. 
Rana, M.A.
Osman, A.
Issue Date: 7-May-2012
Source: Motapothula, M., Dang, Z.Y., Venkatesan, T., Breese, M.B.H., Rana, M.A., Osman, A. (2012-05-07). Influence of the narrow {111} planes on axial and planar ion channeling. Physical Review Letters 108 (19) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevLett.108.195502
Abstract: We report channeling patterns where clearly resolved effects of the narrow {111} planes are observed in axial and planar alignments for 2Â MeV protons passing through a 55Â nm [001] silicon membrane. At certain axes, such as â?̈213â?© and â?̈314â?©, the offset in atomic rows forming the narrow {111} planes results in shielding from the large potential at the wide {111} planes, producing a region of shallow, asymmetric potential from which axial channeling patterns have no plane of symmetry. At small tilts from such axes, different behavior is observed from the wide and narrow {111} planes. At planar alignment, distinctive channeling effects due to the narrow planes are observed. As a consequence of the shallow potential well at the narrow planes, incident protons suffer dechanneled trajectories which are excluded from channeling within the wide planes, resulting in an anomalously large scattered beam at {111} alignment. © 2012 American Physical Society.
Source Title: Physical Review Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56333
ISSN: 00319007
DOI: 10.1103/PhysRevLett.108.195502
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